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A simple and novel transmission electron microscopy (TEM) sample preparation method for phase change nanowire is investigated. A Ge2Sb2Te5 (GST) nanowire TEM sample was meticulously prepared using nanomanipulator and gas injection system in a f eld emission scanning electron microscopy for efficient and accurate TEM analysis. The process can minimize the damage during the TEM sample preparation of the nanowires, thus enabling the crystallographic analysis of as-grown GST nanowires without unexpected phase transition caused by e-beam heating.
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참고문헌 (12)
참고문헌 신청
Diercks D / 2009 / Techniques for consecutive TEM and atom probe tomography analysis of nanowires / Microsc. Microanal 15 (S2) : 254 ~ 255
Horii H / 2003 / A novel cell technology using N-doped GeSbTe fi lms for phase change RAM / 2003 Symp. VLSI Technol : 177 ~ 178
Jung Y / 2006 / Synthesis and characterization of Ge2Sb2Te5 nanowires with memory switching effect / J. Am. Chem. Soc 128 : 14026 ~ 14027
Lee B S / 2005 / Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases / J. Appl. Phys 97 :
Lee S H / 2007 / Highly scalable non-volatile and ultra-lowpower phase-change nanowire memory / Nat. Nanotechnol 2 : 626 ~ 630
Horii H / 2003 / A novel cell technology using N-doped GeSbTe fi lms for phase change RAM / 2003 Symp. VLSI Technol : 177 ~ 178
Jung Y / 2006 / Synthesis and characterization of Ge2Sb2Te5 nanowires with memory switching effect / J. Am. Chem. Soc 128 : 14026 ~ 14027
Lee B S / 2005 / Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases / J. Appl. Phys 97 :
Lee S H / 2007 / Highly scalable non-volatile and ultra-lowpower phase-change nanowire memory / Nat. Nanotechnol 2 : 626 ~ 630
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