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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.27 No.5
- 발행연도
- 2018.9
- 수록면
- 100 - 104 (5page)
- DOI
- 10.5757/ASCT.2018.27.5.100
이용수
초록· 키워드
오류제보하기
Herein, we present the behavior of plasma-doped graphene upon high-temperature vacuum annealing. An ammonia plasma-treated graphene sample underwent vacuum annealing for 1 h at temperatures ranging from 100 to 500 ℃. According to Raman analysis, the structural healing of the plasma-treated sample is more pronounced at elevated annealing temperatures. The crystallite size of the plasma-treated sample increases from 13.87 to 29.15 ㎚ after vacuum annealing. In addition, the doping level by plasma treatment reaches 2.2 × 10<SUP>12</SUP> ㎝<SUP>−2</SUP> and maintains a value of 1.6 × 10<SUP>12</SUP> ㎝<SUP>−2</SUP>, even after annealing at 500 ℃, indicating high doping stability. A relatively large decrease in the pyrrolic bonding components is observed by X-ray photoelectron spectroscopy as compared to other configurations, such as pyridinic and amino bindings, after the annealing. This study indicates that high-vacuum annealing at elevated temperatures provides a method for the structural reorganization of plasma-treated graphene without a subsequent decrease in doping level.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Materials and methods
Ⅲ. Results and discussion
Ⅳ. Conclusions
References
참고문헌 (21)
참고문헌 신청
K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M.I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, and A. A. Firsov, Nature 438, 197 (2005).
J. H. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, Nat. Nanotechnol. 3, 206 (2008).
E. Silva, A. R. B. Mendez, Z. M. Barnett, X. Jia, M. S. Dresselhaus, H. Terrones, M. Terrones, B. G. Sumpter, and V. Meunier, Phys. Rev. Lett 105, 045501 (2010).
X. Li, X. Wang, L. Zhang, S. Lee, and H. Dai, Science 319, 1229 (2008).
X. Yang, S. Tang, G. Ding, X. Xie, M. Jiang, and F. Huang, Nanotechnol. 23, 025704 (2012).
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