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논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2021.2
- 수록면
- 163 - 163 (1page)
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Herein, we demonstrate the n-type conductivity suppressing property of the tellurium (Te)-doped multilayer MoS<sub>2</sub>, grown by metal-organic chemical vapor deposition. The back-gated as-grown Te-doped multilayer MoS<sub>2</sub> field-effect transistor (FET) is observed to exhibit p-type behavior. Enhanced device perfor^_@span style=color:#999999 ^_# ... ^_@/span^_#^_@a href=javascript:; onclick=onClickReadNode('NODE10548812');fn_statistics('Z354','null','null'); style='color:#999999;font-size:14px;text-decoration:underline;' ^_#전체 초록 보기^_@/a^_#
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