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초록· 키워드
오류제보하기
Tin-dioxide (SnO₂) thin films were prepared by using radio-frequency sputtering. An X-ray diffraction analysis revealed that the samples were crystallized to form a tetragonal structure. The interface between the substrate and the thin films of the prepared samples was investigated using transmission electron microscopy (TEM). As the deposition time was increased, the thickness of the SnO₂ thin film increased and its resistance increased constantly. Energy dispersive X-ray spectroscopy confirmed the composition of the samples. Moreover, TEM showed that a SiO₂ layer was grown between the substrate and the SnO₂ thin-film layer. The electrical properties of the thin film were closely related to oxygen defects between the surface and the interface of the thin film, as was confirmed by electrochemical impedance spectroscopy.
목차
I. Introduction
II. Experimental Method
III. Results and Discussion
IV. Conclusions
REFERENCES
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