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논문 기본 정보
- 자료유형
- 학위논문
- 저자정보
- 지도교수
- 김동환
- 발행연도
- 2017
- 저작권
- 고려대학교 논문은 저작권에 의해 보호받습니다.
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Silicon nitride (SiNx) films are generally used as the passivation layer in solar cells, and they are usually made by plasma enhanced chemical vapor deposition (PECVD). Silicon nitride could act as hydrogen diffusion source and then play a role of chemical passivation. Regarding materials that can serve as hydrogen sources, only few investigations have been conducted, linking the mass density of SiNx with its passivation properties. In this study, we investigated the correlation between the passivation quality and chemical bonding of SiNx layers, in regards to the mass density of SiNx, for solar cell applications.
The hydrogenation properties of samples were investigated through QSSPC, and structural properties of the SiNx layers were investigated through XRR, SIMS, and FTIR measurements, varying the SiNx densities over the 2.55 ~ 2.75 g/cm3 range. Through SIMS observations, it was possible to compare the hydrogen concentration in the tunnel oxide. The FT-IR studies revealed that the structure of the layers changed with different SiNx densities. The results showed that the Si-H bonds consistently affected the hydrogen diffusion of silicon nitride, and the hydrogenation. After the hydrogenation, the passivation performance of tunnel oxide by increased as the ratio of N2Si-H2 bonding to the whole Si-H bonding increased. The results indicate that Si-H bonding is a crucial factor for the hydrogenation performance of SiNx. This SiNx-based hydrogenation process can be applied for the production of high efficiency solar cells.
The hydrogenation properties of samples were investigated through QSSPC, and structural properties of the SiNx layers were investigated through XRR, SIMS, and FTIR measurements, varying the SiNx densities over the 2.55 ~ 2.75 g/cm3 range. Through SIMS observations, it was possible to compare the hydrogen concentration in the tunnel oxide. The FT-IR studies revealed that the structure of the layers changed with different SiNx densities. The results showed that the Si-H bonds consistently affected the hydrogen diffusion of silicon nitride, and the hydrogenation. After the hydrogenation, the passivation performance of tunnel oxide by increased as the ratio of N2Si-H2 bonding to the whole Si-H bonding increased. The results indicate that Si-H bonding is a crucial factor for the hydrogenation performance of SiNx. This SiNx-based hydrogenation process can be applied for the production of high efficiency solar cells.
목차
Chapter 1. Introduction - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1Chapter 2. Theoretical background - - - - - - - - - - - - - - - - - - - 32.1 Hydrogen passivation for silicon solar cells with SiNx - - - - - 32.2 Chemical bonding of SiNx - - - - - - - - - - - - - - - - - - - - - - 42.3 High-efficiency solar cells - - - - - - - - - - - - - - - - - - - - - 6Chapter 3. Study of chemical bonding of PECVD SiNx in silicon solar cells 113.1 Introduction - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 113.2 Experimental - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 133.3 Results and discussion - - - - - - - - - - - - - - - - - - - - - - - - 153.4 Conclusions - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 28References - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 29
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