Resistive switching characteristics of Al₂O₃/ZnO thin films for flexible memory applications

Jun ZHU

한국진공학회 학술발표회초록집

2016 .08

Forming free resistive switching behaviors in oxygenated amorphous carbon layer by ultra- thin atomic metal layer

Da Seul Hyeon ,  Gab ,  ial Jang 외 2명

한국진공학회 학술발표회초록집

2020 .08

Dopant concentration dependent resistive switching characteristics in silicon nitride-based memory devices

Sungjun KIM ,  Min-Hwi KIM ,  Tae-Hyeon KIM 외 5명

한국진공학회 학술발표회초록집

2016 .08

A non-destructive study of the conducting filaments in resistive switching metal-oxides using superconducting proximity effect

Yongcheol Jo ,  Yongmin Kim ,  Jongmin Kim 외 10명

한국진공학회 학술발표회초록집

2017 .02

Fabrication of resistive switching memory by using MoS₂ layers grown by chemical vapor deposition

Sung Jae Pa ,  k ,  Dong 외 2명

한국진공학회 학술발표회초록집

2016 .02

TaO_x 와 TiO_x 를 이용한 RRAM 장치의 특성 비교

이가영 ,  정재훈 ,  전석엽 외 4명

새물리

2019 .10

Enhanced Endurance Property in Perovskite Halide Resistive Switching Memory by 2D/3D Heterostructure

이상명 ,  김원빈 ,  이재명 외 3명

한국진공학회 학술발표회초록집

2020 .02

Controlling topological surface state of Bi₂Se₃ by resistive switching

김종훈 ,  정광식 ,  채지민 외 3명

한국진공학회 학술발표회초록집

2020 .02

Resistive Switching in Silver Iodide with Multi-Layer Graphene Electrodes

Beomkyu Shin ,  Yeonwoo Choi ,  Jong Yun Kim 외 2명

Applied Science and Convergence Technology

2024 .07

Resistive Switching Effects of Zinc Silicate Thin Films grown by RF-magnetron co-sputtering method for Nonvolatile Memory Applications

Minho Im ,  Jisoo Kim ,  Junghyun Sok 외 2명

한국진공학회 학술발표회초록집

2019 .08

Enhanced Resistive Switching in Mixtures of MAPbI3 and RbPbI3 School of Advanced Materials Science and Engineering Sungkyunkwan University

SangMyeong Lee ,  Gi Joo Bang ,  Min Hee Kim 외 3명

한국진공학회 학술발표회초록집

2018 .02

Impact of impurities and annealing conditions on the characteristics of Si/HfO₂:Al/TiN ReRAM devices

Jongseok Woo ,  Changhwan Shin

한국진공학회 학술발표회초록집

2020 .02

Phase transformation induced resistive switching behavior in Al/Cu₂Se/Pt

Shania REHMAN ,  Kiwhan KIM ,  Yongji XU 외 1명

한국진공학회 학술발표회초록집

2016 .08

Influence of O₂ gas flow on the resistive switching properties of NiO memristors

Hsien-Heng TANG ,  Yan-Kuin SU

한국진공학회 학술발표회초록집

2016 .08

In-situ magnetization measurements and ex-situ morphological analysis of electrodeposited cobalt onto chemical vapor deposition graphene/SiO₂/Si

F ,  anco ,  Vinicius C. De 외 10명

Carbon letters

2017 .01

Rresistive switching memory has received wide attention as next-generation memory devices. However, accurate operation mechanisms have not yet been well established, limiting the applicabili

J.-H. Song ,  K. S. Jeong ,  D. H. Lim 외 4명

한국진공학회 학술발표회초록집

2017 .02

Characteristic analysis of single SiO_x layer ReRAM devices with thermal annealing and partial pressure

Taegeon Kim ,  Changhwan Shin

한국진공학회 학술발표회초록집

2020 .02

Effect of compliance current on resistive switching characteristics of solution-processed HfOx-based resistive switching RAM (ReRAM)

정하동 ,  조원주

한국진공학회 학술발표회초록집

2016 .02

Parametrized Phase Shift Model Analysis for 350 MeV ⁷Li Elastic Scattering on ¹²C and ²⁸Si

Yong Joo Kim

새물리

2020 .01

Effects of double-SiO₂ thin-layers insertion on bipolar resistive switching characteristics for nonvolatile memory application

정균호 ,  김경민 ,  송승곤 외 1명

한국진공학회 학술발표회초록집

2017 .02