Chlorine-based high density plasma etching of α-Ga2O3 epitaxy layer

엄지훈; Byoung Su Choi; Dae Hwi Jeong; Hyun-Ung Choi; 황승구; Dae-Woo Jeon; 김진곤; 조현

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자료유형: 학술저널

저자정보: 엄지훈 (부산대학교) Byoung Su Choi (Pusan National University) Dae Hwi Jeong (Pusan National University) Hyun-Ung Choi (Pusan National University) 황승구 (부산대학교) Dae-Woo Jeon (Korea Institute of Ceramic Engineering & Technology) 김진곤 (부산대학교) 조현 (부산대학교)

저널정보: 대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.17 No.2

발행연도: 2021.1

수록면: 142 - 147 (6page)

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High density plasma etching of α-Ga2O3 epitaxy layer was performed in chlorine-based (Cl2/Ar and BCl3/Ar) inductivelycoupled plasmas (ICPs) and the effect of plasma composition, ICP source power and rf chuck power on the etch rate andsurface morphology has been studied. The α-Ga2O3 etch rate increased as Cl2or BCl3content in the gas mixture and ICPsource power increased, and Cl2/Ar ICP discharges produced higher etch rates than BCl3/Ar discharges under the conditionsexamined. Increasing rf chuck power was found to increase the α-Ga2O3 etch rate and to improve surface morphology ofthe etched field. The highest etch rates of ~ 612 Å/min and ~ 603 Å/min were obtained in 13Cl2/2Ar and 13BCl3/2Ar ICPdischarges under a moderate source power (500 W) and rf chuck power (250 W) condition, respectively. Anisotropic patterntransfer with a vertical sidewall was performed into the α-Ga2O3 layer using a 10Cl2/5Ar ICP discharge.

#Inductively coupled plasma etching · α-Ga2O3 epitaxy layer · Cl2/Ar plasma · BCl3/Ar plasma

참고문헌 (28)

참고문헌 신청

경신수 / 2017 / Investigation of the Layout and Optical Proximity Correction Effects to Control the Trench Etching Process on 4H-SiC / Electronic Materials Letters 13(4):368~372

김성준 / 2017 / Temperature-Dependent DC Characteristics of AlInN/GaN High-Electron-Mobility Transistors / Electronic Materials Letters 13(4):302~306

Pearton, S. J. / 2018 / A review of Ga 2 O 3 materials, processing, and devices / Appl. Phys. Rev 5:011301

Higashiwaki, M. / 2016 / Current status of power devices / Jpn. J. Appl. Phys 55:1~7

Kim, M. / 2017 / Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications : GaN, SiC, ZnO, β-Ga2O3, and diamond / J. Mater. Chem. C 5:8338~8354

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