지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록· 키워드
오류제보하기
Deuterium (D) is an isotope with one more neutron number than hydrogen (H). Heavy elements rarely change their chemical properties with little effect even if the number of neutrons increases, but low-mass elements change their vibration energy, diffusion rate, and reaction rate because the effect cannot be ignored, which is called an isotope effect. Recently, in the semiconductor and display industries, there is a trend to replace hydrogen gas (H₂) with deuterium gas (D₂) in order to improve process stability and product quality by using the isotope effect. In addition, as the demand for D₂ in industries increases, domestic gas producers are making efforts to produce and supply D₂ on their own. In the case of high purity D₂, most of them are produced by electrolysis of heavy water (D₂O), and among D2, hydrogen deuteride (HD) molecules are present as isotope impurities. Therefore, in order to maximize the isotope effect of hydrogen in the electronic industry, HD, which is an isotope impurity of D₂ used in the process, should be small amount. To this end, purity analysis of D₂ for industrial processing is essential. In this study, HD quantitative analysis of D₂ for high purity D₂ purity analysis was established and hydrogen isotope RM (Reference material) was developed. Since hydrogen isotopes are difficult to analyze with general gas analysis instrument, they were analyzed using a high-precision mass spectrometer (Gas/MS, Finnigan MAT271). High purity HD gas was injected into Gas/MS, sensitivity was determined by a signal according to pressure, and HD concentrations in two bottles of D₂ were quantified using the corresponding sensitivity. The amount fraction of HD in each D₂ was (4518 ± 275) μmol/mol, (2282 ± 144) μmol/mol. D₂, which quantifies HD amount using the developed quantitative analysis method, will be manufactured with hydrogen isotope RM and distributed for quality management and maintenance of electronic industries and gas producers in the future.
목차
Abstract
1. Introduction
2. Experimental
3. Results and Discussion
4. Conclusions
References
참고문헌 (17)
참고문헌 신청
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A. Danos, R. W. MacQueen, Y. Y. Cheng, M. Dvořák, T. A. Darwish, D. R. McCamey and T. W. Schmidt, Journal of Physical Chemistry Letters, 6(15), 3061-3066(2015).
Z. Chen, K. Hess, J. Lee, J. W. Lyding, E. Rosenbaum, I. Kizilyalli, S. Chetlur, and R. Huang, IEEE Electron Device Letters, 21(1), 24-26 (2000).
Y. Mitani, H. Satake, H. Itoh and A. Toriumi, IEEE Transactions on Electron Devices, 49(7), 1192-1197 (2002).
H. Tsuji, C. Mitsui and E. Nakamura, Chemical Communications, 50(94), 14870-14872(2014).
A. Danos, R. W. MacQueen, Y. Y. Cheng, M. Dvořák, T. A. Darwish, D. R. McCamey and T. W. Schmidt, Journal of Physical Chemistry Letters, 6(15), 3061-3066(2015).
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