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커뮤니티
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초록· 키워드
오류제보하기
Although graphene has been considered as one of the promise materials for future logic devices due to extremely high mobility, its applications in electronics have been limited to a few cases such as a flexible interconnect, and RF devices. Furthermore, most of the studies on graphene devices reported unstable operations, claimed to be due to the poor quality of graphene. Nevertheless, recent studies showed that the electrical performance of graphene field effect transistor could be stabilized even with CVD graphene when well-established integration processes to control the interface of graphene were used. These results indicate that as in the case of silicon devices, a proper control of graphene interface is very important for the stable operation of graphene device as well as other 2D material based devices.
목차
Ⅰ. 서론
Ⅱ. 그래핀의 전기적 특성
Ⅲ. 그래핀 전계 효과 트랜지스터 성능 열화 요인
Ⅳ. 그래핀 소자의 동작 특성 확보를 위한 열화 요인 분석
Ⅴ. 고품질 그래핀 전사 공정 개발 및 계면 분석
Ⅵ. 공정 개발을 통한 그래핀 안정성 향상
Ⅶ. 결론
References
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UCI(KEPA) : I410-ECN-0101-2019-420-000021326