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지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록· 키워드
오류제보하기
High-quality graphene was synthesized on Cu foil and Fe2O3 film using CH4 gas via inductively-coupled plasma chemical vapor deposition (ICPCVD). The graphene film was formed on Fe2O3 at a temperature as low as 700°C. Few-layer graphene was formed within a few seconds and 1 min on Cu and Fe2O3, respectively. With increasing growth time and plasma power, the graphene thickness was controllably reduced and ultimately self-limited to a single layer. Moreover, the crystal quality of graphene was constantly enhanced.
Understanding the ICPCVD growth kinetics that are critically affected by ICP is useful for the controllable synthesis of high-quality graphene on metals and oxides for various electronic applications.
목차
등록된 정보가 없습니다.
참고문헌 (25)
참고문헌 신청
Bae S / 2010 / Roll-to-roll production of 30-inch graphene films for transparent electrodes / Nat. Nanotechnol 5 : 574 ~ 578
Becerril H A / 2008 / Evaluation of solution-processed reduced graphene oxide films as transparent conductors / ACS Nano 2 : 463 ~ 470
Bi H / 2012 / Direct growth of fewlayer graphene films on SiO2 substrates and their photovoltaic applications / J. Mater. Chem 22 : 411 ~ 416
Chen J / 2011 / Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates / J. Am. Chem. Soc 133 : 17548 ~ 175451
Dato A / 2008 / Substratefree gas-phase synthesis of graphene sheets / Nano Lett 8 : 2012 ~ 2016
Becerril H A / 2008 / Evaluation of solution-processed reduced graphene oxide films as transparent conductors / ACS Nano 2 : 463 ~ 470
Bi H / 2012 / Direct growth of fewlayer graphene films on SiO2 substrates and their photovoltaic applications / J. Mater. Chem 22 : 411 ~ 416
Chen J / 2011 / Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates / J. Am. Chem. Soc 133 : 17548 ~ 175451
Dato A / 2008 / Substratefree gas-phase synthesis of graphene sheets / Nano Lett 8 : 2012 ~ 2016
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