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초록· 키워드
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Recently, various materials have been introduced to develop a functional device. Specifically, graphene is transparent, flexible, and has high electrical conductivity. A porous silicon surface with numerous nanopores demonstrates a high density charge trapping property. This study investigates the hysteresis characteristics of porous silicon using a graphene/porous silicon heterostructure. Metal assisted chemical etching was used to develop porous silicon on a silicon substrate. The top electrode was fabricated by transferring an extended area of graphene prepared by chemical vapor deposition. Also, the bottom electrode was fabricated under the silicon substrate using a silver paste. The current voltage (I-V) characteristics of various porous silicon devices with controlled porosity were measured. The hysteresis property was observed in the current voltage curve of the device with high porosity. However, hysteresis characteristics were not observed in devices with low porosity.
목차
I. Introduction
II. Experiments
III. Results
IV. Conclusion
REFERENCES
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